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STPS2545CT Datasheet(PDF) 2 Page - STMicroelectronics

Part # STPS2545CT
Description  Power Schottky rectifier
PDF  10 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPS2545CT Datasheet(HTML) 2 Page - STMicroelectronics

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Characteristics
STPS2545C
2/10
Doc ID 8736 Rev 3
1
Characteristics
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x R
th(j-c)(Per diode) + P(diode 2) x Rth(c)
Table 2.
Absolute ratings (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
45
V
IF(RMS) Forward rms current
30
A
IF(AV)
Average forward current
δ = 0.5
TO-220AB D2PAK
Tc =160 °C Per diode
12.5
A
TO-220FPAB
Tc =140 °C Per device
25
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
200
A
IRRM
Repetitive peak reverse current
tp = 2 µs square F=1 kHz
1
A
IRSM
Non repetitive peak reverse current
tp = 100 µs square
2A
PARM
Repetitive peak avalanche power
tp = 1 µs Tj = 25 °C
4800
W
Tstg
Storage temperature range
-65 to + 175
°C
Tj
Maximum operating junction temperature(1)
175
°C
dV/dt
Critical rate of rise reverse voltage
10000
V/µs
1.
condition to avoid thermal runaway for a diode on its own heatsink
dPtot
dTj
<
1
Rth(j-a)
Table 3.
Thermal resistances
Symbol
Parameter
Value
Unit
Rth (j-c)
Junction to ambient
TO-220AB / D2PAK Per diode
1.6
° C/W
TO-220FPAB
4
TO-220AB / D2PAK Total
1.1
° C/W
TO-220FPAB
3.5
Rth (c)
Coupling
TO-220AB / D2PAK
0.6
° C/W
TO-220FPAB
3



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