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STPS2545CT Datasheet(PDF) 3 Page - STMicroelectronics |
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STPS2545CT Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 10 page ![]() STPS2545C Characteristics Doc ID 8736 Rev 3 3/10 To evaluate the conduction losses use the following equation : P = 0.42 x IF(AV) + 0.012 x IF 2 (RMS) Table 4. Static electrical characteristics (per diode) Symbol Parameter Tests Conditions Min. Typ. Max. Unit IR (1) Reverse leakage current Tj = 25 °C VR = VRRM 125 µA Tj = 125 °C 9 25 mA VF (1) Forward voltage drop Tj = 125 °C IF = 12.5 A 0.50 0.57 V Tj = 25 °C IF = 25 A 0.84 Tj = 125 °C IF = 25 A 0.65 0.72 1. Pulse test : tp = 380 µs, δ < 2% Figure 1. Conduction losses versus average current) Figure 2. Average forward current versus ambient temperature ( δ = 0.5) 0 1 2 3 4 5 6 7 8 9 10 0.0 2.5 5.0 7.5 10.0 12.5 15.0 I (A) F(AV) δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ = 1 P (W) F(AV) T δ=tp/T tp 0 2 4 6 8 10 12 14 0 25 50 75 100 125 150 175 T (°C) amb Rth (j-a)=Rth(j-c) Rth (j-a)=50°C/W TO-220AB/D²PAK I (A) F(AV) T δ=tp/T tp Figure 3. Normalized avalanche power derating versus pulse duration Figure 4. Normalized avalanche power derating versus junction temperature 0.001 0.01 0.1 0.01 1 0.1 10 100 1000 1 t (µs) p P(t ) P (1µs) ARM p ARM 0 0.2 0.4 0.6 0.8 1 1.2 0 25 50 75 100 125 150 T (°C) j P(t ) P (25°C) ARM p ARM |
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