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IDB30E120 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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IDB30E120 Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 8 page  2007-09-01 Rev.2.2 Page 1 IDB30E120 Fast Switching EmCon Diode Product Summary VRRM 1200 V IF 30 A VF 1.65 V Tjmax 150 °C Feature • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage • Easy paralleling PG-TO263-3-2 Pin 1 PIN 2 PIN 3 NC C A Marking D30E120 Type Package Ordering Code IDB30E120 PG-TO263-3-2 - Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 1200 V Continous forward current TC=25°C TC=90°C IF 50 30 A Surge non repetitive forward current TC=25°C, tp=10 ms, sine halfwave IFSM 102 Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5 IFRM 76.5 Power dissipation TC=25°C TC=90°C Ptot 138 66 W Operating and storage temperature Tj , Tstg -55...+150 °C Soldering temperature reflow soldering, MSL1 TS 245 °C 1 3 2 * RoHS compliant |
Similar Part No. - IDB30E120_07 |
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Similar Description - IDB30E120_07 |
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