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BAT62-07W Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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BAT62-07W Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
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1 / 4 page ![]() BAT 62-07W Semiconductor Group Sep-07-1998 1 Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies VPS05605 4 2 1 3 ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code Package Pin Configuration 4=A1 Q62702-A1198 BAT 62-07W 1=C1 2=C2 3=A2 SOT-343 62s Maximum Ratings Parameter Symbol Unit Value VR 40 Diode reverse voltage V 20 mA IF Forward current Total power dissipation, TS = 103 °C Ptot 100 mW 150 °C Tj Junction temperature Storage temperature Tstg -55 ...+150 Thermal Resistance K/W RthJA ≤ 630 Junction - ambient 1) Junction - soldering point RthJS ≤ 470 Semiconductor Group 1 1998-11-01 |
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