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BUZ310 Datasheet(PDF) 6 Page - Siemens Semiconductor Group

Part # BUZ310
Description  SIPMOS Power Transistor (N channel Enhancement mode)
PDF  9 Pages
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BUZ310 Datasheet(HTML) 6 Page - Siemens Semiconductor Group

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Semiconductor Group
6
07/96
BUZ 310
Typ. output characteristics
ID = ƒ(VDS)
parameter:
t
p = 80 µs
0
10
20
30
40
50
V
65
V
DS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
A
6.0
I
D
V
GS
[V]
a
a
4.0
b
b
4.5
c
c
5.0
d
d
5.5
e
e
6.0
f
f
6.5
g
g
7.0
h
h
7.5
i
i
8.0
j
j
9.0
k
k
10.0
l
Ptot = 78W
l
20.0
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter:
V
GS
0.0
1.0
2.0
3.0
4.0
A
5.5
I
D
0
2
4
6
8
10
12
Ω
16
R
DS (on)
VGS [V] =
a
4.0
VGS [V] =
a
a
4.5
b
b
5.0
c
c
5.5
d
d
6.0
e
e
6.5
f
f
7.0
g
g
7.5
h
h
8.0
i
i
9.0
j
j
10.0
k
k
20.0
Typ. transfer characteristics
ID = f (VGS)
parameter:
tp = 80 µs
VDS≥2 x ID x RDS(on)max
0
1
2
3
4
5
6
7
8
V
10
V
GS
0.0
0.5
1.0
1.5
2.0
A
3.0
I
D
Typ. forward transconductance
gfs = f (ID)
parameter:
tp = 80 µs,
VDS≥2 x ID x RDS(on)max
0.0
0.5
1.0
1.5
2.0
A
3.0
I
D
0.0
0.5
1.0
S
2.0
g
fs



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