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BUZ310 Datasheet(PDF) 7 Page - Siemens Semiconductor Group

Part # BUZ310
Description  SIPMOS Power Transistor (N channel Enhancement mode)
PDF  9 Pages
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BUZ310 Datasheet(HTML) 7 Page - Siemens Semiconductor Group

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7
07/96
Semiconductor Group
BUZ 310
Gate threshold voltage
VGS (th) = ƒ(Tj)
parameter:
V
GS = VDS, ID = 1 mA
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
V
4.6
V
GS(th)
-60
-20
20
60
100
°C
160
T
j
2%
typ
98%
Drain-source on-resistance
RDS (on) = ƒ(Tj)
parameter:
ID = 1.5 A, VGS = 10 V
-60
-20
20
60
100
°C
160
T
j
0
2
4
6
8
10
12
14
16
18
20
Ω
24
R
DS (on)
typ
98%
Typ. capacitances
C = f (VDS)
parameter:
VGS = 0V, f = 1MHz
0
5
10
15
20
25
30
V
40
V
DS
-2
10
-1
10
0
10
1
10
nF
C
C
rss
C
oss
C
iss
Forward characteristics of reverse diode
IF = ƒ(VSD)
parameter:
Tj, tp = 80 µs
-2
10
-1
10
0
10
1
10
A
I
F
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
V
SD
T
j = 25 °C typ
T
j = 25 °C (98%)
T
j = 150 °C typ
T
j = 150 °C (98%)



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