MLD2N06CL

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(ID = 20 mAdc, VGS = 0 Vdc)

(ID = 20 mAdc, VGS = 0 Vdc, TJ = 150°C)

V(BR)DSS

58

58

62

62

66

66

Vdc

Zero Gate Voltage Drain Current

(VDS = 40 Vdc, VGS = 0 Vdc)

(VDS = 40 Vdc, VGS = 0 Vdc, TJ = 150°C)

IDSS

—

—

0.6

6.0

5.0

20

µAdc

Gate–Source Leakage Current

(VG = 5.0 Vdc, VDS = 0 Vdc)

(VG = 5.0 Vdc, VDS = 0 Vdc, TJ = 150°C)

IGSS

—

—

0.5

1.0

5.0

20

µAdc

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(ID = 250 µAdc, VDS = VGS)

(ID = 250 µAdc, VDS = VGS, TJ = 150°C)

VGS(th)

1.0

0.6

1.5

1

2.0

1.6

Vdc

Static Drain Current Limit

(VGS = 5.0 Vdc, VDS = 10 Vdc)

(VGS = 5.0 Vdc, VDS = 10 Vdc, TJ = 150°C)

ID(lim)

3.8

1.6

4.4

2.4

5.2

2.9

Adc

Static Drain–to–Source On–Resistance

(ID = 1.0 Adc, VGS = 5.0 Vdc)

(ID = 1.0 Adc, VGS = 5.0 Vdc, TJ = 150°C)

RDS(on)

—

—

0.3

0.53

0.4

0.7

Ohms

Forward Transconductance (ID = 1.0 Adc, VDS = 10 Vdc)

gFS

1.0

1.4

—

mhos

Static Source–to–Drain Diode Voltage

(IS = 1.0 Adc, VGS = 0 Vdc)

VSD

—

1.1

1.5

Vdc

SWITCHING CHARACTERISTICS(2)

Turn–On Delay Time

(VDD = 30 Vdc, ID = 1.0 Adc,

VGS(on) = 5.0 Vdc, RGS = 25 Ohms)

td(on)

—

1.0

1.5

µs

Rise Time

(VDD = 30 Vdc, ID = 1.0 Adc,

VGS(on) = 5.0 Vdc, RGS = 25 Ohms)

tr

—

3.0

5.0

Turn–Off Delay Time

(VDD = 30 Vdc, ID = 1.0 Adc,

VGS(on) = 5.0 Vdc, RGS = 25 Ohms)

td(off)

—

5.0

8.0

Fall Time

tf

—

3.0

5.0

(1) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

Figure 1. Output Characteristics

Figure 2. Transfer Function

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

TJ = 25°C

VDS ≥ 7.5 V

TJ = 150°C

25

°C

– 55

°C

0

1

2

3

8

2.5

2.0

1.5

1.0

0.5

0

3.0

3.5

4.0

4

5

6

7

0

2

4

6

8

5

4

3

2

1

0

6.0 V

5.5 V

5.0 V

4.5 V

4.0 V

3.5 V

3.0 V

2.5 V

2.0 V