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MP2492DN Datasheet(PDF) 2 Page - Monolithic Power Systems |
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MP2492DN Datasheet(HTML) 2 Page - Monolithic Power Systems |
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2 / 11 page ![]() MP2492 – 2A, 55V, 100kHz WITH PROGRAMMABLE OUTPUT CURRENT LIMIT MP2492 Rev. 1.0 www.MonolithicPower.com 2 12/20/2010 MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited. © 2010 MPS. All Rights Reserved. ORDERING INFORMATION Part Number Package Top Marking Free Air Temperature (TA) MP2492DN* SOIC8E MP2492DN –40 °C to +85°C MP2492DQ** QFN10(3mmx3mm) 3Q –40 °C to +85°C * For Tape & Reel, add suffix –Z (e.g. MP2492DN–Z). For RoHS compliant packaging, add suffix –LF (e.g. MP2492DN–LF–Z) ** For Tape & Reel, add suffix –Z (e.g. MP2492DQ–Z). For RoHS compliant packaging, add suffix –LF (e.g. MP2492DQ–LF–Z) PACKAGE REFERENCE VIN GND FB SS SW BST ISP ISN EXPOSED PAD ON BACKSIDE CONNECT TO GND VIN GND EN FB SS SW BST PGOOD ISP ISN EXPOSED PAD ON BACKSIDE CONNECT TO GND SOIC8E QFN10(3mmx3mm) ABSOLUTE MAXIMUM RATINGS (1) Input Voltage VIN .......................................... 60V VSW....................................... –0.3V to VIN + 0.3V VBST ................................................... VSW + 6.5V VISN, vISP................................................0V to15V | VISN, - vISP | ........................................ 0 to 0.5V VEN,.......................................................0V to15V All Other Pins..............................–0.3V to +6.5V Continuous Power Dissipation (TA = +25°C) (2) SOIC8E...................................................... 2.5W QFN10 (3 x 3 mm) ..................................... 2.5W Junction Temperature...............................150 °C Lead Temperature ....................................260 °C Storage Temperature.............. –50 °C to +150°C Recommended Operating Conditions (3) Input Voltage VIN ..............................4.5V to 55V Output Voltage VOUT (VIN>16.5V)......0.8V to 15V Output Voltage VOUT (VIN<=16.5V) ..................... ........................................0.8V to (VIN–1.7) V Operating Junct. Temp. .......... –40 °C to +125°C Thermal Resistance (4) θJA θJC SOIC8E................................... 50...... 10 .. °C/W QFN10 (3 x 3 mm)...................50........12... °C/W Notes: 1) Exceeding these ratings may damage the device. 2) The maximum allowable power dissipation is a function of the maximum junction temperature TJ (MAX), the junction-to- ambient thermal resistance θJA, and the ambient temperature TA. The maximum allowable continuous power dissipation at any ambient temperature is calculated by PD (MAX) = (TJ (MAX)-TA)/θJA. Exceeding the maximum allowable power dissipation will cause excessive die temperature, and the regulator will go into thermal shutdown. Internal thermal shutdown circuitry protects the device from permanent damage. 3) The device is not guaranteed to function outside of its operating conditions. 4) Measured on JESD51-7, 4-layer PCB. |
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