STP4435

P Channel Enhancement Mode MOSFET

-

10A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

Copyright © 2007, Stanson Corp.

STP4435 2007. V1

DESCRIPTION

STP4435 is the

P-Channel logic enhancement mode power field effect transistor

which is produced using high cell density, DMOS trench technology. This high density

process is especially tailored to minimize on-state resistance. These devices are

particularly suited for low voltage application such as LCD backlight, notebook

computer power management, and other battery powered circuits.

PIN CONFIGURATION

SOP-8

PART MARKING

SOP-8

Y：Year Code

A：Preduce Code

B：Process Code

FEATURE

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Super high density cell design for

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Exceptional on-resistance and maximum

DC current capability

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SOP-8 package design