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STP4435 Datasheet(PDF) 2 Page - Stanson Technology |
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STP4435 Datasheet(HTML) 2 Page - Stanson Technology |
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2 / 6 page ![]() STP4435 P Channel Enhancement Mode MOSFET - 10A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP4435 2007. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ± 20 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ ID -10.0 -7.0 A Pulsed Drain Current IDM -50 A Continuous Source Current (Diode Conduction) IS -2.3 A Power Dissipation TA=25℃ TA=70℃ PD 2.8 1.8 W Operation Junction Temperature TJ -55/150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 70 ℃ /W |
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