JANTX2N6756 datasheet(1/6 Pages) IRF

Part #	JANTX2N6756

Description	POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14A)

PDF	6 Pages

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Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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1 / 6 page

Product Summary

Part Number

BVDSS

RDS(on)

ID

JANTX2N6756

JANTXV2N6756

Features:

s

Avalanche Energy Rating

s

Dynamic dv/dt Rating

s

Simple Drive Requirements

s

Ease of Paralleling

s

Hermetically Sealed

N-CHANNEL

Provisional Data Sheet No. PD-9.333E

100 Volt, 0.18

Ω

Ω HEXFET

HEXFET technology is the key to International

Rectifier’s advanced line of power MOSFET transis-

tors. The efficient geometry achieves very low on-

state resistance combined with high transconductance.

HEXFET transistors also feature all of the well-es-

tablish advantages of MOSFETs, such as voltage

control, very fast switching, ease of paralleling and

electrical parameter temperature stability. They are

well-suited for applications such as switching power

supplies, motor controls, inverters, choppers, audio

amplifiers, and high energy pulse circuits, and virtu-

ally any application where high reliability is required.

JANTX2N6756

JANTXV2N6756

[REF:MIL-PRF-19500/542]

[GENERIC:IRF130]

HEXFET® POWER MOSFET

Absolute Maximum Ratings

Parameter

JANTX2N6756, JANTXV2N6756

Units

ID @ VGS = 10V, TC = 25°C

Continuous Drain Current

14

ID @ VGS = 10V, TC = 100°C Continuous Drain Current

9

IDM

Pulsed Drain Current

56

PD @ TC = 25°C

Max. Power Dissipation

75

W

Linear Derating Factor

0.60

W/K

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy

75

mJ

IAR

Avalanche Current

14

A

EAR

Repetitive Avalanche Energy

7.5

mJ

dv/dt

Peak Diode Recovery dv/dt

5.5

V/ns

TJ

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Lead Temperature

300 (0.063 in. (1.6mm) from

case for 10.5 seconds)

Weight

11.5 (typical)

g

oC

A

14A

0.18

Ω

100V

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