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AN2657 Datasheet(PDF) 4 Page - STMicroelectronics |
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AN2657 Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 18 page ![]() Model description and parameter extraction AN2657 4/18 1 Model description and parameter extraction The model introduced in this application note is a behavioral model with the equations written in verilog language [1] [2]. Figure 1. Model schematic By observing the equivalent model schematic of Figure 1, the following elements can be noted: ● Parasitic elements associated with the device ● Nonlinear current generator ● JFET resistance ● Substrate-body diode Parasitic elements To model the parasitic elements of the device, a resistor and an inductor are placed in series at each terminal. The model can change the resistance and inductance values according to the simulation temperature. Parameter P in Equation 1 is the temperature dependence, where Tc is its temperature coefficient, T is the temperature used in the simulation and Tnom is the temperature used to measure the parameter value. Equation 1 PT () PT NOM () 1T C TT NOM – () ⋅ + () ⋅ = |
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