Features

1 of 11

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

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Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

InP HBT

LDMOS

RF MEMS

SPF5189Z

50MHz to 4000MHz, GaAs pHEMT LOW NOISE

MMIC AMPLIFIER

The SPF5189Z is a high performance pHEMT MMIC LNA designed for

operation from 50MHz to 4000MHz. The on-chip active bias network pro-

vides stable current over temperature and process threshold voltage vari-

ations. The SPF5189Z offers ultra-low noise figure and high linearity

performance in a gain block configuration. Its single-supply operation and

integrated matching networks make implementation remarkably simple. A

high maximum input power specification make it ideal for high dynamic

range receivers.



Ultra-Low Noise Figure=0.60dB

at 900MHz



Gain=18.7dB at 900MHz



at 1960MHz





Single-Supply Operation: 5V at



Flexible Biasing Options: 3V to

5V, Adjustable Current



Broadband Internal Matching

Applications



Cellular, PCS, W-CDMA, ISM,

WiMAX Receivers



PA Driver Amplifier



Low Noise, High Linearity Gain

Block Applications

DS110606



SPF5189Z

50MHz to

4000MHz,

GaAs pHEMT

Low Noise

MMIC Ampli-

fier

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Small Signal Gain

18.7

dB

0.9GHz

11.3

12.8

14.3

dB

1.96GHz

Output Power at 1dB Compression

22.4

dBm

0.9GHz

20.7

22.7

dBm

1.96GHz

Output Third Order Intercept Point

38.5

dBm

0.9GHz

36.0

39.5

dBm

1.96GHz

Noise Figure

0.55

dB

0.9GHz

0.8

1.1

dB

1.96GHz

Input Return Loss

17.5

dB

0.9 GHz

14.5

18.5

dB

1.96GHz

Output Return Loss

16.0

dB

0.9GHz

11.0

15.0

dB

1.96GHz

Reverse Isolation

24.0

dB

0.9GHz

18.0

dB

1.96GHz

Device Operating Voltage

5

5.25

V

Device Operating Current

75

90

105

mA

Quiescent

Thermal Resistance

65

°C/W

Junction to lead