2

SP8713

ELECTRICAL CHARACTERISTICS

Guaranteed over the following conditions (unless otherwise stated):

Characteristic

Units

Conditions

Supply current

(note 3)

4.1

4.7

mA

Power down input low

Supply current

(note 3)

8

50

µA

Power down input high

Power down high

V

Power down low

0

V

Modulus control 1 high

(note 4)

V

Divide by 64 or 72

Modulus control 1 low

(note 4)

0

V

Divide by 65 or 72

Modulus control 2 high

(note 4)

V

Divide by 72

Modulus control 2 select low

(note 4)

0

V

Divide by 64 or 65

Max. sinewave input frequency

1100

MHz

See Figure 5

Min. sinewave input frequency

200

MHz

See Figure 5

Min. RF input voltage

50

mV RMS RF input 200MHz to

1100MHz. See Figure 5

Max. RF input voltage

200

mV RMS RF input 200MHz to

1100MHz. See Figure 5

Output level (pin 4)

500

600

mV p-p

(notes 5,6,8)

20

ns

RF input = 1GHz

(notes 6,8)

1

ns

RF input = 1GHz

(notes 7,8)

10

µs

See Figure 9

6

µs

See Figure 9

NOTES

2. All electrical testing is performed at +85

°C.

3. Typical values are measured at +25

4. Modulus Control and Ratio Select are high impedance inputs which can be driven directly by standard CMOS outputs.

5. Modulus control is latched at the end of the previous cycle.

6. See Figure 4.

7. See Figure 8.

8. These parameters are not tested but are guranteed by design.

Value

Min.

Typ.

Max.

ABSOLUTE MAXIMUM RATINGS

(note 1)

-0.5V to 7V

Control and RF inputs,

RF input current

(note 1)

10mA

Operating temperature

-40

°C to +85°C

Storage temperature range

-55

°C to +150°C

Maximum junction temperature

+150

°C

NOTE 1. Duration <2 minutes.