NPN SILICON RF TRANSISTOR FOR
LOW NOISE × HIGH-GAIN AMPLIFICATION
3-PIN ULTRA SUPER MINIMOLD

FEATURES
• Ideal for low noise × high-gain amplification and oscillation at 3 GHz or over
NF = 1.1 dB TYP., Ga = 11 dB @ f = 2 GHz, VCE = 2 V, IC = 5 mA
• Maximum available power gain: MAG. = 12.5 dB TYP. @ f = 2 GHz, VCE = 2 V, IC = 20 mA
• High fT: fT = 21 GHz TYP. @ f = 2 GHz, VCE = 2 V, IC = 20 mA
• fT = 25 GHz “UHS0” (Ultra High Speed Process) technology adopted
• 3-pin ultra super minimold (t = 0.75 mm)