General Description
The AOP611 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.Standard Product AOP611 is Pb-free (meets ROHS & Sony 259 specifications). AOP611L is a Green Product ordering option. AOP611 and AOP611L are electrically identical.

Features
    n-channel                              p-channel
    VDS (V) = 40V                      -40V
    ID = 6.5A (VGS=10V)           -5.5A (VGS = -10V)
    RDS(ON)                               RDS(ON)
    < 35mΩ (VGS=10V)              < 52mΩ (VGS = -10V)
    < 47mΩ (VGS=4.5V)             < 80mΩ (VGS = -4.5V)

    ESD rating: 3000V (HBM)
                                                            UIS TESTED!
                                               Rg,Ciss,Coss,Crss Tested