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TSM8588CS Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM8588CS Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 9 page  TSM8588CS Taiwan Semiconductor 1 Version: A1811 Complementary N & P-Channel Power MOSFET FEATURES ● Low gate charge for fast power switching ● 100% UIS and R g tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Building technologies ● DC Fan ● Motor drives KEY PERFORMANCE PARAMETERS PARAMETER TYPE VALUE UNIT VDS Q1 60 V Q2 -60 RDS(on) (max) VGS = 10V Q1 103 m Ω VGS = 4.5V 122 VGS = -10V Q2 180 VGS = -4.5V 220 Qg Q1 4.4 nC Q2 4.6 SOP-8 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T A = 25°C unless otherwise noted) PARAMETER SYMBOL Q1 Q2 UNIT Drain-Source Voltage VDS 60 -60 V Gate-Source Voltage VGS ±20 ±20 V Continuous Drain Current TC = 25°C ID 5 -4 A TA = 25°C 2.5 -2 Pulsed Drain Current (Note 1) IDM 20 -16 A Single Pulse Avalanche Current (Note 2) IAS 6.8 -7 A Single Pulse Avalanche Energy (Note 2) EAS 6.9 7.4 mJ Total Power Dissipation TC = 25°C PD 5.7 5.7 W TC = 125°C 1.1 1.1 Total Power Dissipation TA = 25°C PD 1.4 1.4 W TA = 125°C 0.3 0.3 Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 °C THERMAL PERFORMANCE PARAMETER SYMBOL MAXIMUM UNIT Thermal Resistance – Junction to Case RӨJC 22 °C/W Thermal Resistance – Junction to Ambient RӨJA 88 Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- thermal reference is defined at the solder mounting surface of the drain pins. RӨJC is guaranteed by design while RӨCA is determined by the user’s board design. The RӨJA limit presented here is based on mounting on a 1 in 2 pad of 2 oz copper. |
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