PUSB3TB6 datasheet(3/12 Pages) NEXPERIA

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PUSB3TB6

ESD protection for ultra high-speed interfaces

7. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

input voltage

-5.5

5.5

IEC 61000-4-2, level 4; contact discharge [1]

-10

VESD

electrostatic discharge

voltage

IEC 61000-4-2, level 4; air discharge

[1]

-15

Tstg

storage temperature

-55

125

°C

Tamb

ambient temperature

-40

°C

[1] All pins to ground.

8. Characteristics

Table 5. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VBR

breakdown voltage

II = 1 mA; Tamb = 25 °C

ILR

reverse leakage current per channel; VI = 3 V; Tamb = 25 °C

100

Cline

line capacitance

f = 1 MHz; VI = 0 V; Tamb = 25 °C

[1]

0.27

0.35

ΔCline

line capacitance

difference

f = 1 MHz; VI = 0 V

[1]

0.03

0.05

TLP; positive transient; Tamb = 25 °C

[2]

0.6

TLP; negative transient; ; Tamb = 25 °C [2]

0.6

[3]

0.5

rdyn

dynamic resistance

surge; 8/20 µs; ; Tamb = 25 °C

[3]

0.5

IPP = 3.5 A; positive transient;

Tamb = 25 °C

[3]

4.8

VCL

clamping voltage

IPP = -3.5 A; negative transient;

Tamb = 25 °C

[3]

-4.8

[1] The parameter is guaranteed by design.

[2] 100 ns Transmission Line Pulse (TLP), 50 Ω, pulser at 80 ns.

[3] According to IEC 61000-4-5, pulse time tp = 8/20 µs.

PUSB3TB6

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Product data sheet

23 August 2018

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