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AO6700 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AO6700 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 4 page  Symbol Units VDS V VGS V TA=25°C TA=70°C IDM VKA V TA=25°C TA=70°C IFM TA=25°C TA=70°C TJ, TSTG °C Symbol Units RθJL RθJL 200 Maximum Junction-to-Lead C Steady-State 52 80 Thermal Characteristics Schottky Maximum Junction-to-Ambient A t ≤ 10s RθJA 129 160 °C/W Maximum Junction-to-Ambient A Steady-State 158 90 °C/W Maximum Junction-to-Ambient A Steady-State 102 130 Maximum Junction-to-Lead C Steady-State 51 80 Maximum Junction-to-Ambient A t ≤ 10s RθJA 70 Parameter: Thermal Characteristics MOSFET Typ Max W 0.89 0.5 Junction and Storage Temperature Range -55 to 150 -55 to 150 Power Dissipation PD 1.39 0.78 A 1 Pulsed Forward Current B 10 Schottky reverse voltage 20 Continuous Forward Current A IF 1.5 A 3.3 Pulsed Drain Current B 10 Gate-Source Voltage ±8 Continuous Drain Current A ID 4.1 Parameter MOSFET Schottky Drain-Source Voltage 20 Absolute Maximum Ratings TA=25°C unless otherwise noted AO6700 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode Features VDS (V) = 20V ID = 4.1A (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 4.5V) RDS(ON) < 65mΩ (VGS = 2.5V) RDS(ON) < 95mΩ (VGS = 1.8V) SCHOTTKY VDS (V) = 20V, IF = 1A, VF<0.5V@0.5A General Description The AO6700 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AO6700 is Pb-free (meets ROHS & Sony 259 specifications). AO6700L is a Green Product ordering option. AO6700 and AO6700L are electrically identical. A K G D S TSOP6 Top View G S K D D A 1 2 3 6 5 4 |
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