5

LP55281

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SNVS458D – JUNE 2007 – REVISED OCTOBER 2016

Product Folder Links: LP55281

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Copyright © 2007–2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltages are with respect to the potential at the GND pins.

(3)

If Military/Aerospace specified devices are required, contact the Texas Instruments Sales Office/ Distributors for availability and

specifications.

(4)

Battery/Charger voltage must be above 6 V, and no more than 10% of the operational lifetime.

(5)

Voltage tolerance of LP55281 above 6 V relies on fact that VVDD1 and VVDD2 (2.8 V) are available (ON) at all conditions. If VVDD1 and

VVDD2 are not available (ON) at all conditions, Texas Instruments does not ensure any parameters or reliability for this device.

(6)

Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at TJ = 160°C (typical) and

disengages at TJ = 140°C (typical)

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1) (2) (3)

MIN

MAX

UNIT

V (SW, FB, R1-4, G1-4, B1-4, ALED)(4) (5)

–0.3

7.2

V

VVDD1, VVDD2, VVDDIO, VVDDA

–0.3

6

V

Voltage on ASE1-2, IRT, IRGB, VREF

–0.3 to VVDD1 + 0.3 V with 6 V maximum

Voltage on logic pins

–0.3 to VVDDIO + 0.3 V with 6 V maximum

V (all other pins): voltage to GND

–0.3

6

I (VREF)

10

µA

I (R1-4, G1-4, B1-4)

100

mA

Continuous power dissipation(6)

Internally limited

Junction temperature, TJ-MAX

150

°C

Storage temperature, Tstg

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process..

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

V

(1)

All voltages are with respect to the potential at the GND pins.

(2)

In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may

have to be derated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP =

125°C), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to-ambient thermal resistance of the

part/package in the application (RθJA), as given by the following equation: TA-MAX = TJ-MAX-OP – (RθJA x PD-MAX).

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

(1) (2)

MIN

NOM

MAX

UNIT

V (SW, FB, R1-4, G1-4, B1-4, ALED)

0

6

V

VVDD1,2 with external LDO

2.7

5.5

V

VVDD1,2 with internal LDO

3

5.5

V

VDDA

2.7

2.9

V

VVDDIO

1.65

VVDD1

Voltage on ASE1-2

0.1 V to VVDDA – 0.1 V

Recommended load current

0

300

mA

Junction temperature, TJ

–30

125

°C

Ambient temperature, TA

(2)

–30

85

°C