STM32F102C4 datasheet(42/69 Pages) STMICROELECTRONICS

42 / 69 page

Electrical characteristics

STM32F102x4, STM32F102x6

42/69

Doc ID 15057 Rev 3

Caution:

To avoid exceeding the maximum value of CL1 and CL2 (15 pF) it is strongly recommended

to use a resonator with a load capacitance CL  7 pF. Never use a resonator with a load

capacitance of 12.5 pF.

Example: if you choose a resonator with a load capacitance of CL = 6 pF, and Cstray = 2 pF,

then CL1 = CL2 = 8 pF.

Figure 19.

Typical application with a 32.768 kHz crystal

5.3.7

Internal clock source characteristics

The parameters given in Table 23 are derived from tests performed under ambient

temperature and VDD supply voltage conditions summarized in Table 8.

High-speed internal (HSI) RC oscillator

ai14978b

OSC32_OU T

OSC32_IN

fLSE

CL1

STM32F102xx

32.768 KH z

resonator

Bias

controlled

gain

CL2

Resonator with

integrated capacitors

Table 23.

HSI oscillator characteristics(1)

VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI

Frequency

MHz

ACCHSI

Accuracy of the HSI

oscillator

User-trimmed with the RCC_CR

Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from

the ST website www.st.com.

1(3)

Guaranteed by design, not tested in production.

Factory-

calibrated(4)

Based on characterization, not tested in production.

TA = –40 to 105 °C

–2

2.5

TA = –10 to 85 °C

–1.5

2.2

TA = 0 to 70 °C

–1.3

TA = 25 °C

–1.1

1.8

tsu(HSI)

(4)

HSI oscillator

startup time

µs

IDD(HSI)

(4)

HSI oscillator power

consumption

100

µA

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