STM32F102C4 datasheet(44/69 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F102x4, STM32F102x6

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Doc ID 15057 Rev 3

5.3.9

Memory characteristics

Flash memory

The characteristics are given at TA = –40 to 85 °C unless otherwise specified.

Table 28.

Flash memory endurance and data retention

5.3.10

EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

tLOCK

PLL lock time

200

µs

Jitter

Cycle-to-cycle jitter

300

Based on characterization, not tested in production.

Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with

the range defined by fPLL_OUT.

Table 26.

PLL characteristics (continued)

Symbol

Parameter

Value

Unit

Min(1)

Typ

Max(1)

Table 27.

Flash memory characteristics

Symbol

Parameter

Conditions

Min(1)

Guaranteed by design, not tested in production.

Typ

Max(1)

Unit

tprog

16-bit programming time

TA–40 to +85 °C

52.5

µs

tERASE

Page (1 KB) erase time

TA –40 to +85 °C

tME

Mass erase time

TA –40 to +85 °C

IDD

Supply current

Read mode

fHCLK = 48 MHz with 2

wait states, VDD = 3.3 V

Write / Erase modes

fHCLK = 48 MHz, VDD =

3.3 V

5mA

Power-down mode / Halt,

VDD = 3.0 to 3.6 V

µA

Vprog

Programming voltage

3.6

Symbol

Parameter

Conditions

Value

Unit

Min(1)

Based on characterization not tested in production.

Typ

Max

NEND

Endurance

kcycles

tRET

Data retention

TA = 85 °C, 1000 cycles

Years

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