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MS3023 Datasheet(PDF) 2 Page - Microsemi Corporation

Part # MS3023
Description  RF & Microwave Transistors General Purpose Amplifier Applications
PDF  6 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

MS3023 Datasheet(HTML) 2 Page - Microsemi Corporation

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Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
MS3023
ELECTRICAL CHARACTERISTICS @ 25
°°°°C
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
BVCER
Collector to Emitter Breakdown
IC = 5 mA, RBE = 10
45
-
-
V
BVCBO
Collector to Base Breakdown
IC = 1 mA, IE = 0 mA
45
-
-
V
BVEBO
Emitter to Base Breakdown
IE = 1 mA, IC = 0 mA
3.5
-
-
V
ICES
Collector to Emitter Leakage
VBE = 0 V, VCB = 28V
-
-
1.0
mA
HFE
DC – Current Gain
IC = 200 mA, VCE = 5 V
15
-
120
-
FUNCTIONAL CHARACTERISTICS @ 25
°°°°C
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
POUT
Power Out
3.0
-
-
W
GP
Power Gain
7.8
-
-
dB
η
C
Collector Efficiency
F = 1.0 / 2.0 GHz
VCB = 28V
Pin = 0.5W
35
-
-
%
COB
Output Capacitance
F = 1MHz VCB = 28V
-
-
6.5
pF
Typical Impedance Values
DUT
ZS
ZL
Frequency (GHz)
ZS ( )
ZL ( )
1.0
4.4 – j5.5
9.6 + j16.0
1.5
4.5 – j9.0
4.3 + j7.0
2.0
4.6 – j12.5
3.0 + j1.0
* VCC = 28V, PIN = 0.5W, POUT > 3W
Input
Matching
Network
Output
Matching
Network



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