Alpha Industries, Inc. [781] 935-5150

• Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com

1

Specifications subject to change without notice. 1/01A

31–35 GHz GaAs MMIC

Driver Amplifier

Features

s Single Bias Supply Operation (5 V)

s 19 dB Typical Small Signal Gain

at 35 GHz

s 0.25

µm Ti/Pd/Au Gates

s 100% On-Wafer RF and DC Testing

s 100% Visual Inspection to MIL-STD-883

MT 2010

Chip Outline

AA035P3-00

Description

Alpha’s three-stage reactively-matched Ka band GaAs

18 dB associated gain at 35 GHz. The chip uses Alpha’s

proven 0.25

µm MESFET technology, which is based upon

MBE layers and electron beam lithography for the highest

uniformity and repeatability. The FETs employ surface

passivation to ensure a rugged, reliable part with

through-substrate via holes and gold-based backside

metallization to facilitate solder or epoxy die attach

processes. The amplifier is a self-bias design requiring a

single positive drain bias to one of any three bonding sites.

All chips are screened for S-parameters prior to shipment

for guaranteed performance. A broad range of

applications exist in both the high reliability and

commercial areas where high gain and power are

required.

Parameter

Condition

Symbol

Min.

Max.

Unit

Drain Current

275

350

mA

Small Signal Gain

F= 31–35 GHz

G

15

19

dB

F= 35 GHz

NF

10.5

dB

Input Return Loss

F= 31–35 GHz

-14

-10

dB

Output Return Loss

F= 31–35 GHz

-16

-10

dB

Output Power at 1 dB Gain Compression

F= 35 GHz

15

17

dBm

Saturated Output Power

F= 35 GHz

16

19

dBm

66

°C/W

1. Not measured on a 100% basis.

2. Calculated value based on measurement of discrete FET.

3. Typical represents the median parameter value across the specified

frequency range for the median chip.

0.000

1.250

1.905

Dimensions indicated in mm.

All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.

Chip thickness = 0.1 mm.

Characteristic

Value

-55°C to +90°C

-65°C to +150°C

19 dBm

175°C

Absolute Maximum Ratings