CSD13381F4 datasheet(2/9 Pages) TI1

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CSD13381F4

SLPS448A – JULY 2013 – REVISED NOVEMBER 2013

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Static Characteristics

BVDSS

Drain-to-Source Voltage

VGS = 0 V, IDS = 250 μA

IDSS

Drain-to-Source Leakage Current

VGS = 0 V, VDS = 9.6 V

μA

IGSS

Gate-to-Source Leakage Current

VDS = 0 V, VGS = 4 V

100

VGS(th)

Gate-to-Source Threshold Voltage

VDS = VGS, IDS = 250 μA

0.65

0.85

1.10

VGS = 1.8 V, IDS =0.5 A

310

400

Ω

RDS(on)

Drain-to-Source On Resistance

VGS = 2.5 V, IDS =0.5 A

170

225

Ω

VGS = 4.5 V, IDS = 0.5 A

140

180

Ω

gfs

Transconductance

VDS = 6 V, IDS = 0.5 A

3.2

Dynamic Characteristics

Ciss

Input Capacitance

155

200

VGS = 0 V, VDS = 6 V,

Coss

Output Capacitance

f = 1 MHz

Crss

Reverse Transfer Capacitance

2.5

3.3

Series Gate Resistance

Ω

Gate Charge Total (4.5 V)

1060

1400

Qgd

Gate Charge Gate to Drain

140

VDS = 6 V, IDS = 0.5 A

Qgs

Gate Charge Gate to Source

230

Qg(th)

Gate Charge at Vth

155

Qoss

Output Charge

VDS = 6 V, VGS = 0 V

1120

td(on)

Turn On Delay Time

3.7

Rise Time

1.5

VDS = 0 V, VGS = 4.5 V,

IDS = 0.5 A,RG = 2 Ω

td(off)

Turn Off Delay Time

11.0

Fall Time

3.8

Diode Characteristics

VSD

Diode Forward Voltage

ISD = 0.5 A, VGS = 0V

0.73

0.9

Qrr

Reverse Recovery Charge

1550

VDS= 6 V, IF = 0.5 A, di/dt = 300 A/μs

trr

Reverse Recovery Time

THERMAL CHARACTERISTICS

(TA = 25°C unless otherwise stated)

PARAMETER

Typical Values

UNIT

Thermal Resistance Junction to Ambient(1)

°C/W

RθJA

Thermal Resistance Junction to Ambient(2)

250

°C/W

(1)

Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.

(2)

Device mounted on FR4 material with minimum Cu mounting area.

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