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IRFD310 Datasheet(PDF) 2 Page - Intersil Corporation

Part # IRFD310
Description  0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET
PDF  6 Pages
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

IRFD310 Datasheet(HTML) 2 Page - Intersil Corporation

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4-294
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specified
IRFD310
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
400
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
400
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
0.4
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
1.6
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
1.0
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.008
W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
45
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25
oC to 125oC.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V (Figure 9)
400
-
-
V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250µA
2.0
-
4.0
V
Zero Gate Voltage Drain Current
IDSS
VDS = Rated BVDSS, VGS = 0V
-
-
25
µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125
oC
-
-
250
µA
On-State Drain Current (Note 2)
ID(ON)
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
0.4
-
-
A
Gate to Source Leakage Current
IGSS
VGS = ±20V
-
-
±100
nA
Drain to Source On Resistance (Note 2)
rDS(ON)
ID = 0.2A, VGS = 10V (Figures 7, 8)
-
3.3
3.6
Ω
Forward Transconductance (Note 2)
gfs
VDS ≥ 10V, ID = 1.2A (Figure 11)
1.0
1.2
-
S
Turn-On Delay Time
td(ON)
VDD = 0.5 x Rated BVDSS, ID ≈ 0.4A, RG = 9.1Ω,
VGS = 10V, RL = 495Ω for VDSS = 200V
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-
3.0
10
ns
Rise Time
tr
-10
20
ns
Turn-Off Delay Time
td(OFF)
-
5.0
10
ns
Fall Time
tf
-
8.0
15
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Qg(TOT)
VGS = 10V, ID = 0.4A, VDS = 0.8 x Rated BVDSS
Ig(REF) = 1.5mA (Figure 13)
Gate Charge is Essentially Independent of Operating
Temperature
-
6.0
7.5
nC
Gate to Source Charge
Qgs
-
3.0
-
nC
Gate to Drain “Miller” Charge
Qgd
-
3.0
-
nC
Input Capacitance
CISS
VDS = 25V, VGS = 0V, f = 1MHz (Figure 10)
-
135
-
pF
Output Capacitance
COSS
-35-
pF
Reverse Transfer Capacitance
CRSS
-
8.0
-
pF
Internal Drain Inductance
LD
Measured From Drain
Lead, 2.0mm (0.08in) From
Package to Center of Die
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
-
4.0
-
nH
Internal Source Inductance
LS
Measured From the Source
Lead, 2.0mm (0.08in) from
Package to Source
Bonding Pad
-
6.0
-
nH
Thermal Resistance, Junction to Ambient
RθJA
Free Air Operation
-
-
120
oC/W
LS
LD
G
D
S
IRFD310



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