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LP5520 Datasheet(PDF) 4 Page - Texas Instruments |
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LP5520 Datasheet(HTML) 4 Page - Texas Instruments |
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4 / 46 page ![]() 4 LP5520 SNVS440B – MAY 2007 – REVISED MARCH 2016 www.ti.com Product Folder Links: LP5520 Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) All voltages are with respect to the potential at the GND pins. (3) If Military/Aerospace specified devices are required, contact the TI Sales Office/Distributors for availability and specifications. (4) Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at TJ = 160°C (typical) and disengages at TJ = 140°C (typical). 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) (2) (3) MIN MAX UNIT V (SW, FB, ROUT, GOUT, BOUT) –0.3 22 V VDDA, VDDD, VDDIO, VLDO –0.3 6 V Voltage on logic pins –0.3 V to VDDIO 0.3 V with 6 V maximum V Continuous power dissipation(4) Internally limited Junction temperature, TJ-MAX 125 °C Storage temperature, Tstg –65 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±200 (1) All voltages are with respect to the potential at the GND pins. (2) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP = 125°C), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to ambient thermal resistance of the part/package in the application (RθJA), as given by the following equation: TA-MAX = TJ-MAX-OP – (RθJA × PD-MAX). 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT V (SW, FB, ROUT, GOUT, BOUT) 0 21 V VDDA,DDD 2.9 5.5 V VDDIO 1.65 VDDA V Recommended load current (ROUT, GOUT, BOUT) per driver 0 60 mA Junction temperature, TJ –30 125 °C Ambient temperature, TA (2) –30 85 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 6.4 Thermal Information THERMAL METRIC(1) LP5520 UNIT YZR (DSBGA) 25 PINS RθJA Junction-to-ambient thermal resistance 58.2 °C/W RθJC(top) Junction-to-case (top) thermal resistance 0.3 °C/W RθJB Junction-to-board thermal resistance 7.9 °C/W ψJT Junction-to-top characterization parameter 0.5 °C/W ψJB Junction-to-board characterization parameter 7.9 °C/W |
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