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2SB883 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2SB883
Description  High DC Current Gain- : hFE = 2000(Min)@ IC= -7A
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB883 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Website：www.iscsemi.cn
1
isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power Transistor
2SB883
DESCRIPTION
·High DC Current Gain-
: hFE = 2000(Min)@ IC= -7A
·Wide Area of Safe Operation
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -1.5V(Max)@ IC= -7A
·Complement to Type 2SD1193
APPLICATIONS
·Designed for motor drivers, printer hammer drivers, relay
drivers, voltage regulator control applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-70
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-15
A
ICM
Collector Current-Peak
-20
A
PC
Collector Power Dissipation
TC=25℃
70
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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