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DMN2020UFCL Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMN2020UFCL
Description  ESD Protected Gate
PDF  6 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN2020UFCL Datasheet(HTML) 2 Page - Diodes Incorporated

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DMN2020UFCL
Document number: DS36541 Rev. 3 – 2
2 of 6
www.diodes.com
December 2013
© Diodes Incorporated
DMN2020UFCL
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±10
V
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
TA = +25°C
TA = +70°C
ID
9
7.1
A
Pulsed Drain Current (Note 7)
IDM
45
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 5)
PD
0.61
W
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
RθJA
205
°C/W
Power Dissipation (Note 6)
PD
2.0
W
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)
RθJA
62
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics N-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
20
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
1.0
μA
VDS = 16V, VGS = 0V
Gate-Source Leakage
IGSS
10
μA
VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(th)
0.4
0.9
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS (ON)
10
12
14
14
20
26
mΩ
VGS = 4.5V, ID = 9A
VGS = 2.5V, ID = 7.5A
VGS = 1.8V, ID = 7A
Diode Forward Voltage
VSD
0.7
1.2
V
VGS = 0V, IS = 1.6A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
1788
pF
VDS = 10V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
162
pF
Reverse Transfer Capacitance
Crss
150
pF
Gate Resistance
Rg
1.36
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
Qg
21.5
nC
VGS = 4.5V, VDS = 10V,
ID = 3A
Gate-Source Charge
Qgs
2.2
nC
Gate-Drain Charge
Qgd
2.3
nC
Turn-On Delay Time
tD(on)
3.8
ns
VDD = 10V, VGS = 4.5V, ID = 4A
RG = 2Ω
Turn-On Rise Time
tr
5.7
ns
Turn-Off Delay Time
tD(off)
33
ns
Turn-Off Fall Time
tf
6.8
ns
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.



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