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DMN2020UFCL Datasheet(PDF) 4 Page - Diodes Incorporated |
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DMN2020UFCL Datasheet(HTML) 4 Page - Diodes Incorporated |
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4 / 6 page ![]() DMN2020UFCL Document number: DS36541 Rev. 3 – 2 4 of 6 www.diodes.com December 2013 © Diodes Incorporated DMN2020UFCL -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C) Figure 7 Gate Threshold Variation vs. Ambient Temperature J 0 0.2 0.4 0.6 0.8 I= 1mA D I = 250µA D V , SOURCE-DRAIN VOLTAGE (V) SD Figure 8 Diode Forward Voltage vs. Current 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 T = 25°C A V , DRAIN-SOURCE VOLTAGE (V) DS Figure 9 Typical Junction Capacitance 10 100 1000 10000 0 2 468 10 12 14 16 18 20 Ciss f = 1MHz Coss Crss Q(nC) g, TOTAL GATE CHARGE Figure 10 Gate Charge 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 50 V = 10V I= A DS D 3 V , DRAIN-SOURCE VOLTAGE (V) Figure 11 SOA, Safe Operation Area DS 0.01 0.1 1 10 100 T = 150°C T = 25°C J(max) A V = 4.5V Single Pulse GS DUT on 1 * MRP Board R Limited DS(on) DC P = 10s W P = 1s W P = 100ms W P = 10ms W P = 1ms W P = 100µs W 0.01 0.1 1 10 100 |
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