If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

Supply Voltage

6.0V

Storage Temperature

−65˚C to +150˚C

Input Voltage

−0.3V to V

Power Dissipation (Note 4)

Internally limited

ESD Susceptibility (Note 5)

3500V

ESD Susceptibility (Note 6)

250V

Junction Temperature

150˚C

Soldering Information (Note 1)

Small Outline Package

Vapor Phase (60 seconds)

215˚C

Infrared (15 seconds)

220˚C

Thermal Resistance

θ

56˚C/W

θ

210˚C/W

θ

35˚C/W

θ

170˚C/W

Operating Ratings

Temperature Range

T

−40˚C

≤ T

Supply Voltage

2.0V

≤ V

Note 1: See AN-450 “Surface Mounting and their Effects on Product Reli-

ability” for other methods of soldering surface mount devices.

The following specifications apply for V

Symbol

Parameter

Conditions

LM4808

Units (Limits)

Typ (Note 7)

Limit (Note 8)

V

DD

Supply Voltage

2.0

V (min)

5.5

V (max)

I

DD

Supply Current

V

1.2

3.0

mA (max)

P

tot

Total Power Dissipation

V

6

16.5

mW (max)

V

OS

Input Offset Voltage

V

10

50

mV (max)

Ibias

Input Bias Current

10

pA

V

CM

Common Mode Voltage

0V

4.3

V

G

V

Open-Loop Voltage Gain

R

67

dB

Io

Max Output Current

70

mA

R

O

Output Resistance

0.1

Ω

V

O

Output Swing

R

.3

V

R

4.7

PSRR

Power Supply Rejection Ratio

Cb = 1.0µF, Vripple = 100mV

f = 100Hz

89

dB

Crosstalk

Channel Separation

R

75

dB

THD+N

Total Harmonic Distortion +

Noise

f=1kHz

R

V

0.05

%

66

dB

R

V

0.05

%

66

dB

SNR

Signal-to-Noise Ratio

V

105

dB

f

G

Unity Gain Frequency

Open Loop, R

5.5

MHz

P

o

Output Power

THD+N = 0.1%,f=1kHz

R

105

mW

R

70

60

mW

THD+N = 10%,f=1kHz

R

150

mW

R

90

mW

C

I

Input Capacitance

3

pF

C

L

Load Capacitance

200

pF

SR

Slew Rate

Unity Gain Inverting

3

V/µs

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