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HT2MOA3S20/E/3 Datasheet(PDF) 4 Page - NXP Semiconductors |
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HT2MOA3S20/E/3 Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 22 page  Specifications of the HT2 MOA3 S20 Rev. 1.1 1997-08-19 Ht2moa3.doc/HS Page 4 of 22 2 Specifications 2.1 Mechanical Properties Width (Proposed Punching Outline) 7.55 mm Length (Proposed Punching Outline) 11.75 mm see also drawing in chapter 3 Overall Thickness 0.45 mm ± 0.03 mm Film Thickness 0.16 mm ± 0.005 mm Bondpad Size for Transponder Coil / Module Interconnection 1.9 x 3.5 mm Suitable for Welding/Soldering/ Conductive Gluing 2.2 Materials Tape 110 µm Glass epoxy Copper Plating 35 µm ED copper Bond Plating Ni / Au Suitable for Al and Au wire bonding Backside Plating Ni / Au Glob Top Filled Epoxy Thermal curing 2.3 Temperature Range Operating -25°C to +85°C For packed transponder, depending on type of package Processing 150°C for 30 minutes at a standard lamination pressure for contactless smart card plastic materials (e.g. PVC, PET, ...) Welding Parameters max. 25 ms @ 500 °C on bond pads Soldering Parameters max. 3 s @ 390 °C on bond pads |
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