ACT4070B

Rev 0, 23-Apr-12

Innovative Power

TM

- 3 -

www.active-semi.com

Copyright © 2012 Active-Semi, Inc.

ABSOLUTE MAXIMUM RATINGS

PARAMETER

VALUE

UNIT

IN to GND

-0.3 to + 34

V

EN to GND

V

BS to SW

-0.3 to + 7

V

FB, COMP to GND

-0.3 to 6

V

Continuous SW Current

Internally limited

A

46

°C/W

Maximum Power Dissipation

1.8

W

Operating Junction Temperature

-40 to 150

°C

Storage Temperature

-55 to 150

°C

Lead Temperature (Soldering, 10 sec)

300

°C

SW to GND

V

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Input Voltage

6.5

30

V

Feedback Voltage

0.792 0.808 0.824

V

High-Side Switch On Resistance

130

mΩ

Low-Side Switch On Resistance

7.9

Ω

SW Leakage

1

10

µA

High-Side Switch Peak Current

Limit

Duty Cycle = 50%

3.7

A

COMP to Current Limit Transcon-

ductance

5.25

A/V

Error Amplifier Transconductance

650

µA/V

Error Amplifier DC Gain

4000

V/V

Switching Frequency

250

300

330

kHz

Short Circuit Switching Frequency

44

kHz

Maximum Duty Cycle

88

%

Minimum on Time

200

ns

Enable Threshold Voltage

Hysteresis = 0.1V

1.47

1.6

1.73

V

Enable Pull Up Current

nected

4

µA

Supply Current in Shutdown

75

115

µA

IC Supply Current in Operation

0.675

1

mA

Thermal Shutdown Temperature

Hysteresis = 20°C

150

°C

Input Voltage Rising

5.5

V

: Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating conditions for long periods may

affect device reliability.