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IRFB13N50APBF. Datasheet(PDF) 1 Page - International Rectifier

Part # IRFB13N50APBF.
Description  Power MOSFET(Vdss=500V, Rds(on)max=0.450ohm, Id=14A)
PDF  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFB13N50APBF. Datasheet(HTML) 1 Page - International Rectifier

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12/10/01
www.irf.com
1
PD - 94339
SMPS MOSFET
HEXFET® Power MOSFET
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
Benefits
Applications
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage
and Current
VDSS
RDS(on) max
ID
500V
0.450
Ω
14A
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
14
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
9.1
A
IDM
Pulsed Drain Current

56
PD @TC = 25°C
Power Dissipation
250
W
Linear Derating Factor
2.0
W/°C
VGS
Gate-to-Source Voltage
± 30
V
dv/dt
Peak Diode Recovery dv/dt
ƒ
9.2
V/ns
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300
(1.6mm from case )
°C
Mounting torqe, 6-32 or M3 screw
10
lbf•in (1.1N•m)
Absolute Maximum Ratings
Symbol
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚
–––
560
mJ
IAR
Avalanche Current

–––
14
A
EAR
Repetitive Avalanche Energy

–––
25
mJ
Avalanche Characteristics
TO-220AB
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.50
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient
–––
62
IRFB13N50A


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