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PTVA127002EV-V1-R0 Datasheet(PDF) 1 Page - WOLFSPEED, INC. |
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PTVA127002EV-V1-R0 Datasheet(HTML) 1 Page - WOLFSPEED, INC. |
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1 / 10 page ![]() Rev. 05, 2023-07-10 © 2023 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. The information in this document is subject to change without notice. 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 1200 – 1400 MHz Description The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA127002EV Package H-36275-4 Features • Broadband input and output matching • High gain and efficiency • Integrated ESD protection • Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001) • Low thermal resistance • Excellent ruggedness • Pb-free and RoHS compliant • Capable of withstanding a 10:1 load mismatch (all phase angles) at 700 W peak under RF pulse, 300 µS, 10% duty cycle. RF Characteristics Pulsed RF Performance (tested in Wolfspeed test fixture) VDD = 50 V, IDQ = 150 mA per side, POUT = 700 W, ƒ1 = 1200 MHz, ƒ2 = 1300 MHz, ƒ3 = 1400 MHz, 300 µs pulse width, 12% duty cycle Characteristic Symbol Min Typ Max Unit Gain Gps 15.5 16 — dB Drain Efficiency hD 50 56 — % Gain Flatness DG — 1.0 1.3 dB Return Loss IRL — –20 –11 dB 15 25 35 45 55 65 15 25 35 45 55 65 30 32 34 36 38 40 42 44 46 48 PIN (dBm) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 300 mA, TCASE = 25°C, 300 µs pulse width, 12% duty cycle 1200 MHz 1300 MHz 1400 MHz a127002ev_g1-1 Output Power Efficiency PTVA127002EV |
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