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L99VR03 Datasheet(PDF) 5 Page - STMicroelectronics |
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L99VR03 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 28 page ![]() 2 Electrical specifications 2.1 Absolute maximum ratings Stressing the device above the rating listed in the Table 3 may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Table 3. Absolute maximum ratings Symbol Parameter Value Unit VS DC supply voltage -0.3 to 28 V VS Single pulse/tmax < 400 ms “transient load dump” 40 V VO DC output voltage -0.3 to 7 V IO DC output current Internally limited - VEN Enable input -0.3 to 28 V VESD HBM VS pin vs GND, ESD HBM voltage level ±4 kV ESD HBM voltage level ±2 kV VESD CDM ESD CDM voltage level (CDM AEC-Q100-011) ±500 V ESD CDM voltage level on corner pins (CDM AEC-Q100-011) ±750 V 2.2 Thermal data 2.2.1 Thermal resistance Table 4. Operation junction temperature Symbol Parameter Value Unit Item VFDFN8L PWSSO12 Rthj-amb Junction to ambient thermal resistance 32.5 (1)(2) 28.4 (1)(2) °C/W A.002 1. Rthj-amb based on a 4-layer JEDEC PCB (2S2P) test board with thermal vias (see the Figure 21 and Figure 23). 2. Measurements were performed according to JEDEC 51.2 in still air. 2.2.2 Thermal protection Table 5. Temperature threshold Symbol Parameter Test condition Min. Typ. Max. Unit Item Tprot(1) Thermal protection temperature - 190 - °C A.003 Tprot_hyst Thermal protection hysteresis - 5 - °C A.004 TJ Operating junction temperature TJ -40 - 175 °C A.005 Tstg Storage temperature Tstg - - 150 °C A.006 1. Thermal protection is guaranteed by design and characterization. L99VR03 Electricalspecifications DS14803 - Rev 2 page 5/28 |
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