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Fujitsu Semiconductor Memory Solutions Limited has changed its name to RAMXEED Limited.

RAMXEED Limited will continue to offer and support existing products while maintaining Fujitsu's

part number unchanged.

Memory FeRAM

1M (128 K  8) Bit I2C

MS85RC1MTY(AEC-Q100 Compliant)



DESCRIPTION

The MS85RC1MTY is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072

words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

nonvolatile memory cells.

Unlike SRAM, the MS85RC1MTY is able to retain data without using a data backup battery.

The read/write endurance of the nonvolatile memory cells used for the MS85RC1MTY has improved to be

at least 1013 cycles, significantly outperforming other nonvolatile memory products in the number.

The MS85RC1MTY does not need a polling sequence after writing to the memory such as the case of Flash

memory or E2PROM.



FEATURES

• Bit configuration

: 131,072 words  8 bits

• Two-wire serial interface

: Fully controllable by two ports: serial clock (SCL) and serial data (SDA).

• Operating frequency

: 3.4 MHz (Max @HIGH SPEED MODE)

1 MHz (Max @FAST MODE PLUS)

• Read/write endurance

: 1013 times (  125 C)

• Data retention

: 70.4 years (  85 C),

19.1 years (  105 C),

5.9 years (  125 C)

• Operating power supply voltage: 1.8 V to 3.6 V

• Low-power consumption

: Operating power supply current 0.24mA (Typ @3.4 MHz)

0.4 mA (Max @3.4 MHz)

Standby current 12μA (Typ), 150μA (Max)

Sleep current

0.3μA (Typ), 16μA (Max)

• Operation ambient temperature range

:  40 C to  125 C

• Package

: 8-pin plastic SOP (150mil)

8-pin plastic DFN (5mm  6mm)

RoHS compliant

DS501-00095-0v1-E