AI00776B

13

A0-A12

P

Q0-Q7

VPP

VCC

M2764A

G

E

VSS

8

Figure 1. Logic Diagram

M2764A

NMOS 64K (8K x 8) UV EPROM

FAST ACCESS TIME: 180ns

EXTENDED TEMPERATURE RANGE

SINGLE 5V SUPPLY VOLTAGE

LOW STANDBY CURRENT: 35mA max

TTLCOMPATIBLE DURING READ and PROGRAM

FAST PROGRAMMING ALGORITHM

ELECTRONIC SIGNATURE

PROGRAMMING VOLTAGE: 12V

DESCRIPTION

The M2764A is a 65,536 bit UV erasable and

electrically programmable memory EPROM. It is

organized as 8,192 words by 8 bits.

The M27C64A is housed in a 28 pin Window Ce-

ramic Frit-Seal Dual-in-Line package. The trans-

parent lid allows the user to expose the chip to

ultraviolet light to erase the bit pattern. A new

pattern can then be written to the device by follow-

ing the programming procedure.

A0 - A12

Address Inputs

Q0 - Q7

Data Outputs

E

Chip Enable

G

Output Enable

P

Program

Program Supply

Supply Voltage

Ground

Table 1. Signal Names

1

28

FDIP28W (F)

March 1995

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