ADF4206/ADF4208

Rev. A | Page 6 of 24

ABSOLUTE MAXIMUM RATINGS

TA = 25°C unless otherwise noted.1

Table 3.

Parameter

Ratings

VDD1 to GND2

−0.3 V to +7 V

VDD1 to VDD2

−0.3 V to +0.3 V

VP1, VP2 to GND

−0.3 V to +7 V

VP1, VP2 to VDD1

−0.3 V to +5.5 V

Digital I/O Voltage to GND

−0.3 V to DVDD + 0.3 V

Analog I/O Voltage to GND

−0.3 V to VP + 0.3 V

OSCIN, OSCOUT, RF1IN (A, B),

RF2IN (A, B) to GND

−0.3 V to VDD + 0.3 V

RFINA to RFINB (RF1, RF2)

±320 mV

Operating Temperature Range

Industrial (B Version)

−40°C to +85°C

Storage Temperature Range

−65°C to +150°C

Maximum Junction Temperature

150°C

TSSOP θJA Thermal Impedance

112°C/W

LFCSP θJA Thermal Impedance

(Paddle Soldered)

30.4°C/W

Reflow Soldering

Peak Temperature (40 sec)

260°C

1 This device is a high performance RF integrated circuit with an ESD rating of

<2 kΩ and it is ESD sensitive. Proper precautions should be taken for

handling and assembly.

2 GND = AGND = DGND = 0 V.

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

TRANSISTOR COUNT

11,749 (CMOS) and 522 (Bipolar).

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on

the human body and test equipment and can discharge without detection. Although this product features

proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy

electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance

degradation or loss of functionality.