©2014 Silicon Storage Technology, Inc.

DS-70005004G

10/14

5

2.4 GHz High-Efficiency, High-Gain Power Amplifier Module

SST12LP17E

Data Sheet

Electrical Specifications

The DC and RF specifications for the power amplifier are specified below. Refer to Table 3 for the DC voltage

and current specifications. Refer to Figures 3 through 8 for the RF performance.

Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute

Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and

functional operation of the device at these conditions or conditions greater than those defined in the

operational sections of this data sheet is not implied. Exposure beyond absolute maximum stress rat-

ing conditions may affect device reliability.)

1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the max-

imum rating of average output power could cause permanent damage to the device.

3. Measured with 100% duty cycle 54 Mbps 802.11g OFDM Signal

Surface Mount Solder Reflow Temperature ............................ 260°C for 10 seconds

ESD Level for Human Body Model, HBM ......................................... 1250V

Table 2: Operating Range

Range

Ambient Temp

Industrial

-40°C to +85°C

3.0V to 4.6V

T2.1 75004

Table 3: DC Electrical Characteristics at 25°C

Symbol

Parameter

Min.

Typ

Max.

Unit

Supply Voltage at pins 1 and 2

3.0

3.3

4.6

V

Idle current to meet EVM ~3% @ 18 dBm Output Power, 802.11g OFDM

54 Mbps signal

60

mA

Reference Voltage for pin 4

2.9

V

Current consumption to meet 802.11g OFDM 54 Mbps spectrum mask

@ 21.5 dBm

138

mA

Current consumption to meet 802.11b DSSS 54 Mbps spectrum mask

@ 22 dBm

155

mA

Current consumption to meet EVM ~3% @ 18 dBm Output Power with

802.11g OFDM 54 Mbps signal

105

mA

T3.1 75004