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TGA4548-SM-R Datasheet(PDF) 2 Page - TriQuint Semiconductor |
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TGA4548-SM-R Datasheet(HTML) 2 Page - TriQuint Semiconductor |
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2 / 12 page ![]() TGA4548-SM 17 – 20 GHz 10 W GaN Power Amplifier Data Sheet Rev. C, April 24, 2017 | Subject to change without notice 2 of 12 www.qorvo.com Recommended Operating Conditions Parameter Min Typ Max Units Drain Voltage (VD) +28 V Operating Temp. Range −40 +25 +85 °C IDQ 300 mA VG −2.6 V ID drive (at +38dBm Pout) 930 mA Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Absolute Maximum Ratings Parameter Rating Drain Voltage (VD) 29.5 V Gate Voltage Range (VG) -8 to 0 V RF Input Power, CW, 50 , T=25 °C 26 dBm Dissipated Power (PDISS), CW, 85°C 45 W Storage Temperature −55 to +150 °C Mounting Temperature (30 seconds) 320 °C Channel Temperature (TCH) 275 °C Drain Current (ID1), Top or Bottom 500 mA Drain Current (ID2), Top or Bottom 500 mA Drain Current (ID3), Top and Bottom 2 A Forward Gate Current (IG1), Top or Bottom 3 mA Forward Gate Current (IG2), Top or Bottom 12 mA Forward Gate Current (IG3), Top and Bottom 48 mA Reference Power Detect (Iref) 4 mA Power Detect Diode (Idet) 4 mA Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications Parameter Conditions (1) Min Typ Max Units Operational Frequency Range 17 20 GHz Small Signal Gain 27 dB Input Return Loss 17 dB Output Return Loss 10 dB Output Power at Saturation, Psat 41 dBm Power Added Efficiency, PAE Pin = 12 dBm, 17.7 GHz Pin = 12 dBm, 18.5 GHz Pin = 12 dBm, 19.7 GHz 34 34 28 % Third Order Intermodulation, IM3 Pout = +34 dBm/tone −25 dBc Gain Temperature Coefficient Tdiff = (85 – (−40)) °C −0.054 dB/°C Power Temperature Coefficient Tdiff = (85 – (−40)) °C, Pin = +5 dBm −0.041 dBm/°C Notes: 1. Test conditions unless otherwise noted: VD1 = VD2 = VD3 = 28V, ID1 + ID2 + ID3 = 300mA, VG1 = VG2 = VG3 = −2.6V typical, Temp = +25 °C, Z0 = 50 |
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