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LTC1698IGN Datasheet(PDF) 15 Page - Linear Technology |
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LTC1698IGN Datasheet(HTML) 15 Page - Linear Technology |
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15 / 24 page ![]() 15 LTC1698 1698f If the application generates a bigger current sense voltage, a potential divider can be easily obtained by adding a resistor across C2. With this additional resistor, the volt- age sensed by the current comparator becomes: R RR V DIV DIV RSENSE + (• ) • 26 An RC network formed by RCILM and CCILM between ICOMP and VOUT can be used to stabilize the current limit loop. Connecting the compensation network to VOUT minimizes output overshoot during start-up or short-circuit recov- ery. The RCILM and CCILM zero should be chosen to be well within the closed-loop crossover frequency. This pin can be left floating if current loop compensation is not re- quired. The forward converter secondary current limit func- tion can be disabled by shorting ISNSandISNSGNDtoground. Auxiliary 3.3V Logic Power Supply An internal P-channel LDO (low dropout regulator) pro- duces the 3.3V auxiliary supply that can power external devices or drive the MARGIN pin. This supply can source up to 10mA of current and the current limit is provided internally. The pin requires at least a 0.1 µF bypass capacitor. MOSFET Selection Two logic-level N-channel power MOSFETs (Q3 and Q4 in Figure 1) are required for most LTC1698 circuits. They are selected based primarily on the on-resistance and body diode considerations. The required MOSFET RDS(ON)should be determined based on input and output voltage, allow- able power dissipation and maximum required output current. The average inductor (L1) current is equal to the output load current. This current is always flowing through either Q3 or Q4 with the power dissipation split up according to the duty cycle: DC Q V V N N DC Q V V N N OUT IN P S OUT IN P S () • () – • 3 41 = = where NP/NS is the turns ratio of the transformer T1. The RDS(ON) required for a given conduction loss can now be calculated by rearranging the relation P = I2R. PI R DC Q R P IDC Q PI R DC Q R P IDC Q MAX Q MAX DS ON Q DS ON Q MAX Q MAX MAX Q MAX DS ON Q DS ON Q MAX Q MAX () ( ) () () () ( ) () () •• ( ) •( ) •• ( ) •( ) 3 2 3 3 3 2 4 2 4 4 4 2 3 3 4 4 = ⇒= = ⇒= where IMAX is the maximum load current and PMAX is the allowable conduction loss. In a typical 2-transistor forward converter circuit, the duty cycle is less than 50% to prevent the transformer core from saturating. This results in the duty cycle of Q4 being greater than that of Q3. Q4 will dissipate more power due to the higher duty cycle. A lower RDS(ON) MOSFET can be used for Q4. This will slow down the turn-on time of Q4 since a lower RDS(ON) MOSFET will have a larger gate capacitance. The next consideration for the MOSFET is the characteris- tic of the body diode. The body diodes conduct during the power-up phase, when the LTC1698 VDD supply is ramp- ing up and the time-out circuit is adapting to the SYNC input frequency. The CG and FG signals terminate prema- turely and the inductor current flows through the body diodes. The body diodes must be able to take the compa- rable amount of current as the MOSFETs. Most power MOSFETs have the same current rating for the body diode and the MOSFET itself. The LTC1698 CG and FG MOSFET drivers will dissipate power. This will increase with higher switching frequency, higher VDD or larger MOSFETs. To calculate the driver dissipation, the total gate charge Qg is used. This param- eter is found on the MOSFET manufacturers data sheet. The power dissipated in each LTC1698 MOSFET driver is: PDRIVER = Qg • VDD • fSW where fSW is the switching frequency of the converter. APPLICATIO S I FOR ATIO |
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