AN1506 datasheet(13/14 Pages) STMICROELECTRONICS

13 / 14 page

AN1506 - APPLICATION NOTE

13/14

REFERENCES:

[1] B. J. Baliga,

Power Semiconductor Devices, PWS Publishing Company, Boston, MA, 1995.

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of the

Power Conversion Intelligent Motion Conference, June 1998, Nuremberg, Germany

[3] N. Mohan, T. M. Undeland, W. P. Robbins,

Power Electronics: Converters, Applications, and Design,

Second edition, John Wiley & Sons, New York, 1995.

[4] A. Di Napoli, F. Caricchi, F. Crescimbini, G. Noia, “Design Criteria of a Low-Speed Axial-Flux PM

Synchronous Machine,” International Conference on Evolution and Modern Aspects of Synchronous

Machines, Zurich, August 25-27, 1991, pp.834-839.

[5] M. H. Rashid,

Power Electronics, Circuits, Devices, and Applications, Second edition, Prentice Hall,

Inc., Englewood Cliffs, New Jersey, 1993.

[6] G. T. Galyon, J. Cardinal. P. J. Singh, J. Newcomer, W. Lorenz, K. Chu, “Static and dynamic testing of

power MOSFETs,”

Sixteenth Annual IEEE Applied Power Electronics Conference and Exposition,

Anaheim, USA, March 2001, pp. 230-237.

[7] A. Fiel, T. Wu, “MOSFETs failure modes in the zero-voltage-switched full-bridge switching mode

power supply applications,”

Sixteenth Annual IEEE Applied Power Electronics Conference and

Exposition, Anaheim, USA, March 2001, pp. 1247-1252.

[8] J. J. Huselstein, C. Gauthier, C. Glaize, “Use of the MOSFET channel reverse conduction in an

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[9] M. Peppel, B. Weis, “Optimized reverse diode operation of power MOSFETs,”

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the 2000 IEEE Industry Applications Conference, Roma, Italy, October 2000, pp. 2961-2965.

AN1506 Datasheet(PDF) 13 Page - STMicroelectronics