LPC802 datasheet(50/83 Pages) NXP

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LPC802

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Product data sheet

Rev. 1.6 — 27 April 2018

50 of 83

NXP Semiconductors

LPC802

32-bit ARM Cortex-M0+ microcontroller

13. Dynamic characteristics

13.1 Flash memory (EEPROM based)

[1]

Number of program/erase cycles.

[2]

Programming times are given for writing 64 bytes to the flash. Tamb <= +85 C. Flash programming with IAP

calls (see LPC802 user manual).

13.2 FRO

[1]

Typical ratings are not guaranteed. The values listed are at room temperature (25

C), nominal supply

voltages.

Table 15.

Flash characteristics

Tamb = 40 C to +105 C. Based on JEDEC NVM qualification.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Nendu

endurance

[1] 200,000 500,000

cycles

tret

retention time

powered

years

not powered

years

ter

erase time

page or multiple

consecutive pages,

sector or multiple

consecutive

sectors

-1.03

tprog

programming

time

[2] -2.5

Table 16.

Dynamic characteristic: FRO

Tamb = 40 C to +105 C; 1.7 V  VDD  3.6 V.

Symbol

Min

Typ[1]

Max

Unit

FRO clock frequency; Condition: 0

C  Tamb  70 C

fosc(RC)

9 -1 %

9 +1 %

MHz

fosc(RC)

12 -1 %

12 +1 %

MHz

fosc(RC)

15 -1 %

15 +1 %

MHz

FRO clock frequency; Condition:

20 C  Tamb  70 C

fosc(RC)

9 -2 %

9 +1 %

MHz

fosc(RC)

12 -2 %

12 +1 %

MHz

fosc(RC)

15 -2 %

15 +1 %

MHz

FRO clock frequency; Condition:

40 C  Tamb  105 C

fosc(RC)

9 -3.5 %

9 +2.5 %

MHz

fosc(RC)

12 -3.5 %

12 +2.5 %

MHz

fosc(RC)

15 -3.5 %

15 +2.5 %

MHz

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