PM6641TR datasheet(12/47 Pages) STMICROELECTRONICS

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Electrical characteristics

PM6641

12/47

Symbol

Parameter

Test condition

Values

Unit

Min

Typ

Max

Power management section – DDR2/3 rails

DSCG Turn-Off Level

VAVCC = +5 V

1.5

DSCG Turn-On Level

3.5

EN_1S8 (S5), EN_VTT (S3)

Turn-Off Level

VAVCC = +5 V

0.8

EN_1S8 (S5), EN_VTT (S3)

Turn-On Level

VTT LDO section – DDR2/3 rails

PG_VTT_TH

Power-good upper threshold

106

110

114

Power-good lower threshold

ILDOIN,ON

LDO input bias current in full-

ON State

EN_1S8 = EN_VTT = +5 V,

No Load on VTT

110

µA

ILDOIN,STR

LDO input bias current in

suspend-To-RAM State

EN_1S8 = +5 V, EN_VTT = 0 V,

No Load on VTT

ILDOIN,STD

LDO input bias current in

suspend-To-Disk State

EN_1S8 = EN_VTT = 0 V,

No Load on VTT

IVTTFB, BIAS VTTFB bias current

EN_1S8 = EN_VTT = +5 V,

VVTTFB = VVOUT_1S8 /2

µA

IVTTFB, LEAK VTTFB leakage current

EN_1S8 = +5 V, EN_VTT = 0 V,

VVTTFB = VVOUT_1S8 /2

IVTT,LEAK

VTT leakage current

EN_1S8 = +5 V, EN_VTT = 0 V,

VVTT = VVOUT_1S8 /2

-10

VVTT

LDO linear regulator output

voltage (DDR2)

EN_1S8 = EN_VTT = +5 V,

IVTT 0 A, VLDOIN = 1.8 V

0.9

LDO linear regulator output

voltage (DDR3)

EN_1S8 = EN_VTT = +5 V,

IVTT = 0 A, VLDOIN = 1.5 V

0.75

LDO Output accuracy respect to

VTTREF, VLDOIN =1.8 V

EN_1S8 = EN_VTT = +5 V,

-1 mA < IVTT < 1 mA

-20

EN_1S8 = EN_VTT = +5 V,

-1 A < IVTT < 1 A

-25

EN_1S8 = EN_VTT = +5 V,

-2 A < IVTT < 2 A

-35

Table 6. Electrical characteristics (continued)

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