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TLE8080EM Datasheet(PDF) 7 Page - Infineon Technologies AG |
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TLE8080EM Datasheet(HTML) 7 Page - Infineon Technologies AG |
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7 / 39 page ![]() TLE8080EM General Product Characteristics Data Sheet 7 Rev. 1.1, 2012-10-19 4 General Product Characteristics Table 1 Absolute Maximum Ratings 1) Tj= -40°C to +150°C: All voltages with respect to ground unless otherwise specified. Positive current flowing into pin (unless otherwise specified) 1) Not subject to production test, specified by design. Parameter Symbol Values Unit Note / Test Condition Number Min. Typ. Max. Voltages Supply Voltage VS V VS -0.3 – 40 V – 4.1.1 Supply Voltage V5DD V V5DD -0.3 – 5.5 V – 4.1.2 Input Voltage on Pins IN1, IN3, SCLK, SI, WD_DIS V x -0.3 – 5.5 V – 4.1.3 Input Voltage on Pins CSN, TX V x -0.3 – V5DD +0.3V V – 4.1.3 Input Voltage VR_IN1, VR_IN2 V VR_IN1/2 -0.3 – 5.5 V see also 4.2.1 and 4.2.2 4.1.4 DC Voltage on Pins OUT1-5, KIO V x -0.3 – 30 V respect to PGND all channels and KIO are switched off 4.1.5 DC Voltage on Pins VR_OUT, SO, RX, NRO V x -0.3 – 5.5 V Ix<1mA 4.1.6 DC Voltage AGND to PGND V x -0.3 – 0.3 V 4.1.7 DC Voltage on Pin KIO V KIO -0.3 – 35 V respect to PGND KIO is switched off 4.1.8 Currents Input Current between VR_IN1 and VR_IN2 I VR_IN1,VR_IN2 -– – 50 mA – 4.2.1 Input Current VR_IN1, VR_IN2 to GND I VR_IN1/2,GND -– – 10 mA – 4.2.2 Temperatures Junction Temperature T j -40 – 150 °C – 4.3.1 Storage Temperature T stg -55 – 150 °C – 4.3.2 ESD Susceptibility ESD Resistivity all Pins to GND V ESD -2 – 2 kV HBM2) 2) ESD susceptibility, HBM according to EIA/JESD 22-A114B 4.4.1 ESD Resistivity all Pins to GND V ESD -500 – 500 V CDM3) 3) ESD susceptibility, Charged Device Model “CDM” EIA/JESD22-C101 or ESDA STM5.3.1 4.4.2 ESD Resistivity Pin 1, 12, 13, 24 (corner pins) to GND V ESD1,19,20,36 -750 – 750 V CDM3) 4.4.3 |
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