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AT49LL080 Datasheet(PDF) 15 Page - ATMEL Corporation |
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AT49LL080 Datasheet(HTML) 15 Page - ATMEL Corporation |
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15 / 31 page ![]() 15 AT49LL080 3273C–FLASH–5/03 READ ARRAY: Upon initial device power-up and after exit from reset, the device defaults to read array mode. This operation is also initiated by writing the Read Array command. The device remains enabled for reads until another command is written. Once the internal state machine (WSM) has started a block erase or program operation, the device will not recognize the Read Array Command until the operation is completed, unless the operation is suspended via an Erase Suspend or Program Suspend Com- mand. The Read Array command functions independently of the V PP voltage. PRODUCT IDENTIFICATION: The product identification mode identifies the device and manufacturer as Atmel. Following the Product ID Entry command, read cycles from the addresses shown in Table 11 retrieve the manufacturer and device code. To exit the product identification mode, any valid command can be written to the device. The Product ID Entry command functions independently of the V PP voltage. SECTOR ERASE: Before a byte can be programmed, it must be erased. The erased state of the memory bits is a logical “1”. Since the AT49LL080 does not offer a complete chip erase, the device is organized into multiple sectors that can be individually erased. The Sector Erase command is a two-bus cycle operation. Successful sector erase requires that the corresponding sector’s Write Lock bit be cleared and the corresponding write-protect pin (TBL or WP) be inactive. If sector erase is attempted when the sector is locked, the sector erase will fail, with the reason for fail- ure in the status register. Successful sector erase only occurs when VPP = VPPH1 or VPPH2. If the erase operation is attempted at VPP ≠ VPPH1 or VPPH2 erratic results may occur. BYTE PROGRAMMING: The device is programmed on a byte-by-byte basis. Program- ming is accomplished via the internal device command register and is a two-bus cycle operation. The programming address and data are latched in the second bus cycle. The device will automatically generate the required internal programming pulses. Please note that a “0” cannot be programmed back to a “1”; only an erase operation can convert “0”s to “1”s. After the program command is written, the device automatically outputs the status regis- ter data when read. When programming is complete, the status register may be checked. If a program error is detected, the status register should be cleared before cor- rective action is taken by the software. The internal WSM verification Error Checking only detects “1”s that do not successfully program to “0”s. Reliable programming only occurs when VPP = VPPH1 or VPPH2. If the program operation is attempted at VPP ≠ VPPH1 or VPPH2 erratic results may occur. A successful program operation also requires that the corresponding sector’s Write Lock bit be cleared, and the corresponding write-protect pin (TBL or WP) be inactive. If a pro- gram operation is attempted when the sector is locked, the operation will fail. ERASE SUSPEND: The Erase Suspend command allows sector-erase interruption to read or program data in another sector of memory. Once the sector erase process starts, writing the sector erase suspend command requests that the WSM suspend the Table 11. Identifier Codes Code Address (AID) Data Manufacturer Code 00000 1FH Device Code 00001 EBH |
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