L6759D datasheet(16/51 Pages) STMICROELECTRONICS

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Electrical specifications

L6759D

16/51

Doc ID 023240 Rev 1

IMON ADC

GetReg(15h)

V(IMON) = 0.992 V

Hex

Accuracy

Hex

PWM outputs and ENDRV

PWMx,

SPWM

Output high

I = 1 mA

Output low

I = -1 mA

0.2

IPWM1

Test current

Sourced from pin, EN=0

µA

IPWM2

Sourced from pin, EN=0

µA

IPWM3, SPWM

Sourced from pin, EN=0

-10

µA

ENDRV

Voltage low

IENDRV = -4 mA

0.4

Protection (both sections)

OVP

Overvoltage protection

VSEN rising; wrt Ref.

100

200

UVP

Undervoltage protection

VSEN falling; wrt Ref; Ref > 500 mV

-525

-375

FBR DISC

FB disconnection

VCS- rising, above VSEN/SVSEN

650

700

750

FBG DISC

FBG disconnection

FBR rising wrt VID

950

1000

1050

VR_RDY,

SVR_RDY

Voltage low

ISINK = -4 mA

0.4

VOC_TOT

OC threshold

VILIM rising, to GND

2.45

2.5

2.55

IOC_TH

Constant current(1)

MPhase only

µA

VR_HOT

Voltage low

ISINK = -4 mA

Ω

Gate drive control

GDC

Max. current(1)

Any PS

200

Impedance

PS00h (GDC = VDRV)

Ω

> PS00h (GDC = VCC5)

Ω

Guaranteed by design, not subject to test.

Table 5.

Electrical characteristics (continued)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

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