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EM342-RTR Datasheet(PDF) 7 Page - Silicon Laboratories

Part # EM342-RTR
Description  High-Performance, Integrated RF4CE System-on-Chip
PDF  143 Pages
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Manufacturer  SILABS [Silicon Laboratories]
Direct Link  http://www.silabs.com
Logo SILABS - Silicon Laboratories

EM342-RTR Datasheet(HTML) 7 Page - Silicon Laboratories

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EM342
Rev 1.0
7
2. Electrical Specifications
2.1. Absolute Maximum Ratings
Table 2.1 lists the absolute maximum ratings for the EM342.
2.2. Recommended Operating Conditions
Table 2.2 lists the rated operating conditions of the EM342.
Table 2.1. Absolute Maximum Ratings
Parameter
Test Condition
Min
Max
Unit
Regulator input voltage (VDD_PADS)
–0.3
+3.6
V
Analog, Memory and Core voltage (VDD_24MHZ,
VDD_VCO, VDD_RF, VDD_IF, VDD_PADSA,
VDD_MEM, VDD_PRE, VDD_SYNTH, VDD_CORE)
–0.3
+2.0
V
Voltage on RF_P,N; RF_TX_ALT_P,N
–0.3
+3.6
V
RF Input Power
(for max level for correct packet reception see
Table 2.7)
RX signal into a lossless
balun
+15
dBm
Voltage on any GPIO, SWCLK, nRESET, VREG_OUT
–0.3
VDD_PADS
+0.3
V
Voltage on OSCA, OSCB, NC
–0.3 VDD_PADSA
+0.3
V
Storage temperature
–40
+140
°C
Note: Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Table 2.2. Operating Conditions
Parameter
Test Condition
Min
Typ
Max
Unit
Regulator input voltage (VDD_PADS)
2.1
3.6
V
Analog and memory input voltage
(VDD_24MHZ, VDD_VCO, VDD_RF, VDD_IF,
VDD_PADSA, VDD_MEM, VDD_PRE,
VDD_SYNTH)
1.7
1.8
1.9
V
Core input voltage when supplied from internal
regulator (VDD_CORE)
1.18
1.25
1.32
V
Core input voltage when supplied externally
(VDD_CORE)
1.18
1.9
V
Operating temperature range, TA
–40
+85
°C
Note: Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.



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