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GXM Datasheet(PDF) 104 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # GXM
Description  Geode??GXm Processor Integrated x86 Solution with MMX Support
PDF  244 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

GXM Datasheet(HTML) 104 Page - National Semiconductor (TI)

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104
Revision 3.1
Integrated Functions (Continued)
4.3.1
Memory Array Configuration
The memory controller supports up to two 64-bit, 168-pin
unbuffered
SDRAM
modules
(DIMM).
Each
DIMM
receives a unique set of RAS, CAS, WE, and CKE lines.
Each DIMM can have one or two 64-bit DIMM banks.
Each DIMM bank is selected by a unique chip select (CS).
There are four chip select signals to choose between a
total of four DIMM banks. Each DIMM bank also receives
auniqueSDCLK. Each DIMM bank canhavetwo or four
component banks. Component bank selection is done
through the bank address (BA) lines.
For example, 16 Mb SDRAMS have two component
banks and 64 Mb SDRAMs have two or four component
banks. For single DIMM bank modules, the memory con-
troller can support two DIMMS with a maximum of eight
component banks. For dual DIMM bank modules, the
memory controller can support two DIMMs with a maxi-
mum of 16 component banks. Up to 16 banks can be
open at the same time.
Figure 4-4. Memory Array Configuration
MA[12:0]
BA[1:0]
MD[63:0]
DQM[7:0]
RASA#
CASA#
WEA#
CS1#
CS0#
CKEA
SDCLK0
SDCLK1
RASB#
CASB#
WEB#
CS3#
CS2#
CKEB
SDCLK2
SDCLK3
A[12:0]
BA[1:0]
MD[63:0]
DQM[7:0]
RAS#
CAS#
WE#
S0#, S2#
CKE0
CK0, CK2
A[12:0]
BA[1:0]
MD[63:0]
DQM[7:0]
RAS#
CAS#
WE#
S1#, S3#
CKE1
CK1, CK3
Bank 0
Bank 1
A[12:0]
BA[1:0]
MD[63:0]
DQM[7:0]
RAS#
CAS#
WE#
S0#, S2#
CKE0
CK0, CK2
A[12:0]
BA[1:0]
MD[63:0]
DQM[7:0]
RAS#
CAS#
WE#
S1#, S3#
CKE1
CK1, CK3
Bank 0
Bank 1
DIMM 1
DIMM 0
Geode™ GXm
Processor



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